PL50N06BGD5 N-Channel Enhancement Mode Field Effect Transistor

Description

PL50N06BGD5 N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS(ON)( at VGS=4.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: PL50N06BGD5
Manufacturer: Plingsemic
File Size: 1.19 MB
Datasheet: PL50N06BGD5-Plingsemic.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) Tc

PL50N06BGD5 Distributors

📁 Related Datasheet

PL500-15 PL500-16 PL500-17 PL500-37 PL502-02 PL502-03

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PL50N06BGD5 N-Channel Enhancement Mode Field Effect Transistor Plingsemic

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