Datasheet4U Logo Datasheet4U.com

PL50N06BGD5 - N-Channel Enhancement Mode Field Effect Transistor

PL50N06BGD5 Description

PL50N06BGD5 N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS(ON)( at VGS=4.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

PL50N06BGD5 Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) Tc

📥 Download Datasheet

Preview of PL50N06BGD5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PL50N06BGD5
Manufacturer
Plingsemic
File Size
1.19 MB
Datasheet
PL50N06BGD5-Plingsemic.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

📁 Related Datasheet

  • PL500-15 - Low Phase Noise VCXO (Micrel Semiconductor)
  • PL500-16 - Low Phase Noise VCXO (Micrel Semiconductor)
  • PL500-17 - Low Phase Noise VCXO (Micrel Semiconductor)
  • PL500-37 - Low Phase Noise VCXO (Micrel Semiconductor)
  • PL502-02 - Low Phase Noise VCXO (Micrel Semiconductor)
  • PL502-03 - Low Phase Noise VCXO (Micrel)
  • PL502-04 - Low Phase Noise VCXO (Micrel)
  • PL502-30 - 750kHz - 800MHz Low Phase Noise VCXO (Micrel)

📌 All Tags

N-Channel Enhancement Mode Field Effect Transistor Plingsemic
Plingsemic PL50N06BGD5-like datasheet

PL50N06BGD5 Stock/Price