LB401 Datasheet, Transistor, Polyfet RF Devices

LB401 Features

• Transistor low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 W

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Part number:

LB401

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Polyfet RF Devices

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38.12kb

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📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

LB401 Application

• Applications Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pro

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LB401

Polyfet RF Devices

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