Datasheet Specifications
- Part number
- LB401
- Manufacturer
- Polyfet RF Devices
- File Size
- 38.12 KB
- Datasheet
- LB401_PolyfetRFDevices.pdf
- Description
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Description
polyfet rf devices LB401 General .Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25LB401 Distributors
📁 Related Datasheet
📌 All Tags