Part number:
LB401
Manufacturer:
Polyfet RF Devices
File Size:
38.12 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
LB401
Polyfet RF Devices
38.12 KB
Silicon gate enhancement mode rf power ldmos transistor.
📁 Related Datasheet
LB4S 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER (WON-TOP)
LB4SA Low Profile Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier (GOOD-ARK)
LB4SB Low Profile Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier (GOOD-ARK)
LB4SL Low Profile Miniature Single Phase Surface Mount Bridge Rectifiers (GOOD-ARK)
LB-202BL High efficiency / two-digit numeric displays (Rohm)
LB-203BL High efficiency / three-digit numeric displays (Rohm)
LB-302FP High efficiency / two-digit numeric displays (Rohm)
LB-303AK High efficiency / three-digit numeric displays (Rohm)
LB-402 High efficiency / two-digit numeric displays (Rohm)
LB-402 High efficiency / two-digit numeric displays (Rohm)
