LB401
Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.0 Watts Push
- Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
13.5 A
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL Gps PARAMETER mon Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 14 55 20:1 TYP MAX UNITS d B % TEST CONDITIONS...
