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SC721 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SC721 Description

polyfet rf devices SC721 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SC721 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SC721
Manufacturer
Polyfet RF Devices
File Size
37.04 KB
Datasheet
SC721_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices SC721-like datasheet