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SQ721 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SQ721 Description

polyfet rf devices SQ721 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SQ721 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SQ721
Manufacturer
Polyfet RF Devices
File Size
36.28 KB
Datasheet
SQ721_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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