PDD3808Z N-Channel MOSFETs

Potens semiconductor

Description

30V N-Channel MOSFETs PDD3808Z General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 30V,42A, RDS(ON) =9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

PDD3808Z Distributors

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Potens semiconductor PDD3808Z-like datasheet