PDD3960 N-Channel MOSFETs

Potens semiconductor

PDD3960 Description

30V N-Channel MOSFETs PDD3960 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD3960 Features

* 30V, 90A, RDS(ON) =2.6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Datasheet Details

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Potens semiconductor PDD3960-like datasheet