PDD4903 Datasheet, Mosfet, Potens semiconductor

PDD4903 Features

• Mosfet
• -40V,-45A, RDS(ON) =15mΩ@VGS = -10V
• Fast switching
• Green Device Available
• Suit for -4.5V Gate Drive Applications Applications
• MB / VGA

PDF File Details

Part number:

PDD4903

Manufacturer:

Potens semiconductor

File Size:

776.45kb

Download:

📄 Datasheet

Description:

P-channel mosfet. These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDD4903 Application

• Applications TO252 Pin Configuration D S G G D S BVDSS -40V RDSON 15m ID -45A Features
• -40V,-45A, RDS(ON) =15mΩ@VGS = -10V

TAGS

PDD4903

Potens semiconductor

📁 Related Datasheet

PDD4904 - N-Channel MOSFETs (Potens semiconductor)
40V N-Channel MOSFETs PDD4904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4906 - N-Channel MOSFET (Potens semiconductor)
40V N-Channel MOSFETs PDD4906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4909 - P-Channel MOSFET (Potens semiconductor)
40V P-Channel MOSFETs PDD4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4912-1 - N-Channel MOSFET (Potens semiconductor)
40V N-Channel MOSFETs PDD4912-1 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD4943 - P-Channel MOSFET (Potens semiconductor)
40V P-Channel MOSFETs PDD4943 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4943-1 - P-Channel MOSFET (Potens semiconductor)
40V P-Channel MOSFETs PDD4943-1 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD4960 - N-Channel MOSFETs (Potens semiconductor)
40V N-Channel MOSFETs PDD4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4963 - P-Channel MOSFET (Potens semiconductor)
40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDD4964 - N-Channel MOSFET (Potens semiconductor)
40V N-Channel MOSFETs PDD4964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD4701 - N+P Dual Channel MOSFETs (Potens semiconductor)
40V N+P Dual Channel MOSFETs PDD4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO.