PDD6908 Datasheet, Mosfets, Potens semiconductor

PDD6908 Features

• Mosfets
• 60V,25A, RDS(ON)=34mΩ@VGS=10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available Applications

PDF File Details

Part number:

PDD6908

Manufacturer:

Potens semiconductor

File Size:

460.52kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDD6908 Application

• Applications TO252 Pin Configuration D S G G D S PDD6908 BVDSS 60V RDSON 34m ID 25A Features
• 60V,25A, RDS(ON)=34mΩ@VGS=10V

TAGS

PDD6908

Potens semiconductor

📁 Related Datasheet

PDD6901 - P-Channel MOSFET (Potens semiconductor)
60V P-Channel MOSFETs PDD6901 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6902 - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDD6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6903 - P-Channel MOSFETs (Potens semiconductor)
60V P-Channel MOSFETs PDD6903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6904 - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDD6904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6905 - P-Channel MOSFETs (Potens semiconductor)
60V P-Channel MOSFETs PDD6905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6906 - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDD6906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6907 - P-Channel MOSFETs (Potens semiconductor)
60V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDD6909 - P-Channel MOSFETs (Potens semiconductor)
60V P-Channel MOSFETs PDD6909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6910 - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDD6910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD6912 - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDD6912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .