PDD6912

N-Channel MOSFETs

Potens semiconductor

PDD6912 Features

* 60V,11A, RDS(ON) =75mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IA

PDD6912 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD6912 Datasheet (791.00 KB)

PDD6912 Datasheet Preview — Preview of PDD6912 PDF

Datasheet Details

Part number:

PDD6912

Manufacturer:

Potens semiconductor

File Size:

791.00 KB

Description:

N-channel mosfets.

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PDD6912 N-Channel MOSFETs Potens semiconductor

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PDD6912 Features

PDD6912 General Description

Datasheet Details

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