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PDD6960 Datasheet - Potens semiconductor

N-Channel MOSFETs

PDD6960 Features

* 60V,75A, RDS(ON) =6mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available App

* licMaottioor nDsrive

* Power Tools

* LED Lighting

* Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS

PDD6960 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD6960 Datasheet (837.89 KB)