Datasheet4U Logo Datasheet4U.com

PDD8966A Datasheet - Potens semiconductor

PDD8966A-Potenssemiconductor.pdf

Preview of PDD8966A PDF
PDD8966A Datasheet Preview Page 2 PDD8966A Datasheet Preview Page 3

Datasheet Details

Part number:

PDD8966A

Manufacturer:

Potens semiconductor

File Size:

451.59 KB

Description:

N-channel mosfets.

PDD8966A, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDD8966A Features

* 80V,60A, RDS(ON) =12mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS

📁 Related Datasheet

📌 All Tags

Potens semiconductor PDD8966A-like datasheet