PDD8966A

N-Channel MOSFETs

Potens semiconductor

PDD8966A Features

* 80V,60A, RDS(ON) =12mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS

PDD8966A General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD8966A Datasheet (451.59 KB)

PDD8966A Datasheet Preview — Preview of PDD8966A PDF

Datasheet Details

Part number:

PDD8966A

Manufacturer:

Potens semiconductor

File Size:

451.59 KB

Description:

N-channel mosfets.

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PDD8966A N-Channel MOSFETs Potens semiconductor

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PDD8966A Features

PDD8966A General Description

Datasheet Details

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