PDD8966A N-Channel MOSFETs

Potens semiconductor

PDD8966A Description

80V N-Channel MOSFETs General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD8966A Features

* 80V,60A, RDS(ON) =12mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Datasheet Details

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Potens semiconductor PDD8966A-like datasheet