Datasheet Details
Part number:
PDD8966A
Manufacturer:
Potens semiconductor
File Size:
451.59 KB
Description:
N-channel mosfets.
PDD8966A-Potenssemiconductor.pdf
Datasheet Details
Part number:
PDD8966A
Manufacturer:
Potens semiconductor
File Size:
451.59 KB
Description:
N-channel mosfets.
PDD8966A, N-Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDD8966A Features
* 80V,60A, RDS(ON) =12mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Networking
* Load Switch
* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS
📁 Related Datasheet
📌 All Tags