PDEV2120Y Datasheet (Potens semiconductor)

PDEV2120Y, Dual P+N Channel MOSFETs

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod

PDEV2120Y Features

* Fast switching

* Green Device Available

* Suit for 1.5V Gate Drive Applications D1 G2 S2 S1 G1 D2 D1 D2 Applications G1 G2 S1 S2

* Notebook

* Load Switch

* Networking

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID