PDP4970 Datasheet (Potens semiconductor)

PDP4970, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDP4970 Features

* 40V, 170A, RDS(ON) =1.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available TO220 Pin Configuration D G Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR G DS S Absolute Maximum Ratings Tc=25℃ unless otherwise noted S