PDP6980-5 Datasheet (Potens semiconductor)

PDP6980-5, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDP6980-5 Features

* 65V,180A, RDS(ON) =2.2mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications

* Quick Charger GDS S Absolute Maximum Ratings Tc=25℃ unless otherwise no