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PDP8902

N-Channel MOSFET

PDP8902 Features

* 80V,120A, RDS(ON) =8.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM E

PDP8902 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDP8902 Datasheet (707.73 KB)

Preview of PDP8902 PDF

Datasheet Details

Part number:

PDP8902

Manufacturer:

Potens semiconductor

File Size:

707.73 KB

Description:

N-channel mosfet.

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PDP8902 N-Channel MOSFET Potens semiconductor

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