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PDQ2307 Datasheet - Potens semiconductor

P-Channel MOSFETs

PDQ2307 Features

* -20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS V

PDQ2307 General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDQ2307 Datasheet (654.01 KB)