PDQ2307
Overview
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- -20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive Applications
