PJR07N65LB Datasheet - Potens semiconductor

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PJR07N65LB N-Channel MOSFETS

650V N-Channel MOSFETS PJR07N65LB General .
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

PJR07N65LB-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PJR07N65LB

Manufacturer:

Potens semiconductor

File Size:

446.30 KB

Description:

N-Channel MOSFETS

Features

* 7A,650V, RDS(ON) =0.57Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Applications

* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAR PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25℃) Drain Current

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PJR07N65LB N-Channel MOSFETS Potens semiconductor

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