PJR07N65LB Datasheet (Potens semiconductor)

PJR07N65LB, N-Channel MOSFETS

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

PJR07N65LB Features

* 7A,650V, RDS(ON) =0.57Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* High efficient switched mode power supplies

* LED Lighting

* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwi