PJR07N65LB N-Channel MOSFETS

Potens semiconductor

Description

650V N-Channel MOSFETS PJR07N65LB General .
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

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Datasheet Specifications

Part number: PJR07N65LB
Manufacturer: Potens semiconductor
File Size: 446.30 KB
Datasheet: PJR07N65LB-Potenssemiconductor.pdf
Description: N-Channel MOSFETS

Features

* 7A,650V, RDS(ON) =0.57Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Applications

* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAR PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25℃) Drain Current

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PJR07N65LB N-Channel MOSFETS Potens semiconductor

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