PMEN2N7002S - N-Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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PMEN2N7002S Features
* 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* G-S ESD Protection Diode Embedded Applications
* Motor Drive
* Power Tools
* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherw
