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PMEN2N7002S Datasheet - Potens semiconductor

PMEN2N7002S N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PMEN2N7002S Features

* 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* G-S ESD Protection Diode Embedded Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherw

PMEN2N7002S-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PMEN2N7002S

Manufacturer:

Potens semiconductor

File Size:

581.51 KB

Description:

N-channel mosfets.

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