BD539D Datasheet, Transistors, Power Innovations Limited

PDF File Details

Part number:

BD539D

Manufacturer:

Power Innovations Limited

File Size:

85.53kb

Download:

📄 Datasheet

Description:

Npn silicon power transistors.

BD539D Application

• Applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license,

TAGS

BD539D

Power Innovations Limited

📁 Related Datasheet

BD539 - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min).

BD539A - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539B - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539B - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539C - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

BD539C - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD539D - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

BD530 - PNP SILICON AMPLIFIER TRANSISTORS (Motorola Inc)
.