BCR12CM Datasheet, Triac, Powerex Power Semiconductors

BCR12CM Features

• Triac
• Glass Passivation
• Selected for Inductive Loads B N M J J P K ŒŽ E CONNECTION DIAGRAM Applications:
• AC Switch
• Heating
• Motor Control

PDF File Details

Part number:

BCR12CM

Manufacturer:

Powerex Power Semiconductors

File Size:

80.59kb

Download:

📄 Datasheet

Description:

Triac. A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of appli

BCR12CM Application

• Applications
• AC Switch
• Heating
• Motor Controls
• Lighting
• Solid State Relay
• Switch Mode Po

TAGS

BCR12CM

Powerex Power Semiconductors

📁 Related Datasheet

BCR12CM - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dim.

BCR12CM-12LA - Triac (Renesas)
BCR12CM-12LA Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline REJ03G0297-0300 R.

BCR12CM-12LB - Triac (Renesas)
BCR12CM-12LB 600V - 12A - Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6 Data Sheet R.

BCR12CM-12LB - Thyristor (INCHANGE)
isc Thyristors BCR12CM-12LB DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.

BCR12CM-12LG - Thyristor (INCHANGE)
isc Thyristors BCR12CM-12LG DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.

BCR12CM-16LH - Triac (Renesas)
BCR12CM-16LH 800V - 12A - Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) Data .

BCR12CS - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CS OUTLINE DRAWING Dimensions in mm 4 .

BCR12CS-12LB - Triac (Renesas)
BCR12CS-12LB Triac Medium Power Use Features  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline Preliminary Datas.

BCR129 - NPN Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=.

BCR129 - NPN Silicon Digital Transistor (Infineon Technologies AG)
BCR129 /SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • F.