BS08D-T112 Datasheet - Powerex Power Semiconductors

BS08D-T112 Silicon Bilateral Switch

The BS08D-T112 bilateral switch is a silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C temperature coefficient and have excellently matched characteristics in both directions. F.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com BS08D-T112 Silicon Bilateral Switch C BK J A D D H GG F E 12 3 CONNECTION DIAGRAM 1 T2 TERMINAL 2 GATE 3 T1 TERMINAL Outline Drawing and Circuit Diagram Dimension Inches Millimeters A B C D E 0.55 Min. 0.12 Max. 0.16 0.39 0.098 Max. 14.0 Min. 3.0 Max. 4.0 1.0 2.5 Max. Dimension F G H J K Inches 0.016 0.10 0.018 0.004 0.29 Max. Millimeters 0.4 2.5 0.45 0.1 7.5 M.

BS08D-T112 Features

* £ Low Switching Voltage of 7 to 9 Volts £ Excellent Switching Voltage Temperature Characteristics (0.01%/°C) £ High Reliability Devices £ Gate Electrode Facilitating Switching Operation Control and Synchronization Applications: £ Trigger Circuits for Thyristor or Triac, Oscillators, Timers Ord

BS08D-T112-PowerexPowerSemiconductors.pdf