QID3320002 Datasheet (Powerex) - Dual IGBT HVIGBT Module

QID3320002, Dual IGBT HVIGBT Module

Powerex IGBT Modules are designed for use in switching applications.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode.

All components and interconnects are isolated from the heat sinking b

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3320002 Dual IGBT HVIGBT Module 200 Amperes/3300 Volts S NUTS (3TYP) A D FF J (2TYP) C 78 56 BE 1 23 H M H 4 G (3TYP) T (SCREWING DEPTH) R (DEEP) K (3TYP) L (2TYP) V (4TYP) U (5TYP) P Q N 41 5 6 2 8 73 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.89 48.0 D 4.88±0.01 124.0±0.25 E 2.24±0.01 57.0±0.25 F 1.18 30.0 G 0.43

QID3320002 Features

*  Advanced Mitsubishi R-Series Chip Technology  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Compact Industry Standard Package Applications:  Medium Voltage Drives  High Voltage Power Supplies 01/13 Rev. 8 1 Powerex, In