PDNM6ET20V05
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.29@ VGS=4.5V
PDNM6ET20V05 Dual N-Channel, Digital FET
S2 1
6 D2
S2
D2
6N2
G2 2
5 G1
G2
G1
D1 3
4 S1
D1
S1
Circuit Diagram
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Continuous
Curren(TJ=150℃)
Pulsed
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human
Body Model (100p F/1500Ω)
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
Marking (Top...
