PDNM6UT20V05
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.29@ VGS=4.5V
PDNM6UT20V05 Dual N-Channel, Digital FET
SOT-363
S2 1
6 D2
G2 2
5 G1
D1 3
4 S1
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Continuous
Curren(TJ=150℃)
Pulsed
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
VDS VGS
PD TJ, TSTG
Symbol
RθJA
Maximum
20 8 0.5 1.5 0.3 -55 to 150
Maximum
Units...
