PDNM8P60V5
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 60
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
32@ VGS=4.5V
D1 D1 D2 D2 8 76 5
PE60D05S YYWW
1 23 4 S1 G1 S2 G2
Top View(SOP-8)
PDNM8P60V5 Dual N-Channel MOSFET
SOP-8L
D1 D2
G1 G2 S1 S2
Internal Structure
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous（TC=100℃） Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristics
Parameter
Thermal Resistance,Junction-to-Ambient(Note 1)
Symbol
VDS VGS ID ID（100℃） IDM PD TJ, TSTG
Symbol
RθJA
Maximum
60 ±20
5 3.5 24 2 -55 to 150
Maximum
Units
V V A A A W ℃
Units
℃/W
Rev.06.0
1 .prisemi.
Dual N-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter...
