PI50F65T3H1A7 Insulate-Gate Bipolar Transistor

Prisemi

Description

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PI50F65T3H1A7 Insulate-Gate Bipolar Transistor CE G TO-247-3L Features. Trench and field-stop technology. Easy parallel switching capabili.

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Datasheet Specifications

Part number: PI50F65T3H1A7
Manufacturer: Prisemi
File Size: 1.37 MB
Datasheet: PI50F65T3H1A7-Prisemi.pdf
Description: Insulate-Gate Bipolar Transistor

Features

* Trench and field-stop technology
* Easy parallel switching capability
* High efficiency for inverters
* High ruggedness performance

Applications

* Industrial UPS
* Welding machine
* Solar converters
* Energy storage
* EV charger
* PFC applications
* Welding machines Marking (Top View) Absolute maximum rating@25℃ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current

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PI50F65T3H1A7 Insulate-Gate Bipolar Transistor Prisemi

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