PNM6N30V20MF
Description
The PNM6N30V20MF uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications..
PNM6N30V20MF N-Channel MOSFET
MOSFET Product Summary
VDS(V) 30
RDS(on)(mΩ) 3.8 @ VGS = 10V
ID(A) 20
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) Total Power Dissipation2) Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range
Bottom View
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
Circuit Diagram
3020M
YYWW
Marking (Top View)
Symbol VDS VGS ID IDM PD RθJA
TJ,TSTG
Value 30
±20 20 60 2.4 52
-55~+150
Units V V A A W
℃/W...
