PNM8P30V12
Description
The N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed.
PNM8P30V12 N-Channel MOSFET
D（5、6、7、8）
VDS(V) 30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
12@ VGS=10V 17@ VGS=4.5V
G（4） S（1、2、3）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS IDSS IGSS
VGS(th)
RDS(ON)
ID =250μA,VGS=0V VDS =24V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =10m A VGS=10V, ID =12A VGS=4.5V, ID =10A
VGS=0V, IS =1A
DYNAMIC...
