PPM6N12V10 - P-Channel MOSFET

Datasheet Summary

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

Prisemi

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Datasheet Details

Part number	PPM6N12V10
Manufacturer	Prisemi
File Size	247.37 KB
Description	P-Channel MOSFET
Datasheet	PPM6N12V10 Datasheet
Additional preview pages of the PPM6N12V10 datasheet.

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N12V10 P-Channel MOSFET VDS(V) -12 MOSFET Product Summary RDS(on)(mΩ) ID(A) 12 @ VGS=-4.5V -10 Internal structure （D）1 （D）2 （G）3 6（D） 5（D） 4（S） Bottom View （D）（D）（G） 1 2 3 D S 6 5 4 （D）（D）（S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ TA=70℃ TA=25℃ Total Power Dissipation TA=125℃ Operating and Storage Junction Temperature Range Symbol VDS VGS ID ID PD PD TJ,TSTG Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1b) Symbol RθJA RθJA RθJC Value -12 ±8.0 -10 -40 2.4 0.

Published: Feb 25, 2020 |