PPMT3415R
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT3415R P-Channel MOSFET
D（3）
VDS(V) -20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.03 @ VGS=-4.5V
-6
G（1）
Absolute maximum rating@25℃
Rating
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation(Note 1) Avalanche Current(Note 3) Avalanche Energy(Note 3) Junction and Storage Temperature Range
Thermal resistance
Parameter
Maximum Junction-to-Ambient (Note 1)
Symbol
VDS VGS ID IDM PD IAS EAS TJ,TSTG
S（2）
Value
-20 ±10 -6 -30 1.8 10.3 26.7 -55 to +150
Units
V V A A W A m J ℃
Symbol
RθJA
Typ.
Units
℃/W
Rev.06.0
.prisemi.
P-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Drain-Source Breakdown...
