PSBDAF120V5
Prisemi
247.25kb
Schottky barrier diode.
TAGS
📁 Related Datasheet
PSBDAF100V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF150V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF200V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF20V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF40V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF60V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBDAF80V5 - Schottky Barrier diode
(Prisemi)
PSBDBFXXXV5 Schottky Barrier diode
Feature
¾ Metal silicon junction, majority carrier conduction ¾ For surface mounted applications ¾ Low power loss, .
PSBD1DF40V2L - Schottky Barrier diode
(Prisemi)
Feature
Ultra Small mold type. (SOD-123FL) Low VF High reliability.
Construction
Silicon epitaxial planar
Mechanical Characteristics
Lead fi.
PSBD2FD20V1H - Schoktty Barrier Diode
(Prisemi)
Feature
Forward Current: 1A Reverse voltage: 20V Low forward voltage Low leakage current Trench MOS barrier Schottky technology Ultra Smal.
PSBD2FD40V01 - Schottky Barrier Diode
(Prisemi)
Feature
Ultra Small mold type. DFN1006-2L Low IR High reliability.
Applications
Low current rectification
PSBD2FD40V01 Schottky Barrier Diode.