PSICM4TAT120R16 SiC MOSFET

Prisemi

Description

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PSICM4TAT120R16 SiC MOSFET MOSFET Product Summary VDS(V) 1200 RDS(on)(mΩ) 16 mΩ@ VGS= 18V ID(A) 132 Feature. High Speed Switching with Low.

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Datasheet Specifications

Part number: PSICM4TAT120R16
Manufacturer: Prisemi
File Size: 2.88 MB
Datasheet: PSICM4TAT120R16-Prisemi.pdf
Description: SiC MOSFET

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC-DC Converters
* Batterry Chargers Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage ( Absolute maximum values） Gate-Source Voltage ( Recommended operational values) Continuous Drain Cur

PSICM4TAT120R16 Distributors

📁 Related Datasheet

PSICS9169-01 PSI-A-4V-ASCX PSI-D-4V-ASCX PSI100-06 PSIG100-06 PSIPM100-06

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PSICM4TAT120R16 SiC MOSFET Prisemi

Prisemi PSICM4TAT120R16-like datasheet

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