PSM8N10R8
Description
The PSM8N10R8 uses split gate trench technology to provide excellent RDS(ON) low gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
MOSFET Product Summary
VDS(V) 100
RDS(on)(mΩ) 6.5@ VGS = 10V 8.3@ VGS = 4.5V
ID(A) 70
Feature
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Excellent Qgd x RDS(ON) Product(FOM)
- Advanced Technology for DC-DC Converts
- Small Form Factor Thermally Efficient Package
Enables Higher Density End Products
- 100% UIS (Avalanche) Rated
- Lead-Free Finish ; Ro HS pliant
- Halogen and Antimony Free. ”Green” Device
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance ,...
