V54C3512404VE, V54C365164VE Datasheet - ProMOS Technologies

V54C3512404VE 64Mbit SDRAM

The V54C365(16/80/40)4VE is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16, 4 banks x 2Mbit x 8, or 4 banks x 4Mbit x 4. The V54C365(16/80/40)4VE achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes.

V54C3512404VE Features

* 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pul

V54C365164VE_ProMOSTechnologies.pdf