HYB25D512160DF Datasheet - Qimonda

HYB25D512160DF 512M DDR SDRAM

Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bit.

July 2008 www.DataSheet4U.com HYB25D512400D[E/F/T] HY[B/I]25D512800D[C/E/F/T](L) HY[B/I]25D512160D[C/E/F/T](L) 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.01 Internet Data Sheet www.DataSheet4U.com HY[B/I]25D512[40/80/16]0D[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.01, 2008-07 All Page 29 Page 33 All Adapted internet edition Changed tCK.MAX at CL=3 for -5 speed Added new IDD values New data sheet Previous Revisi.

HYB25D512160DF Features

* Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and

HYB25D512160DF Datasheet (2.42 MB)