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HYB25D512800DF - 512M DDR SDRAM

This page provides the datasheet information for the HYB25D512800DF, a member of the HYB25D512400DE 512M DDR SDRAM family.

Description

Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.

Accesses begin with the registration of an Active command, which is then followed by a Read or Write command.

Features

  • es Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask re.

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Datasheet Details

Part number HYB25D512800DF
Manufacturer Qimonda
File Size 2.42 MB
Description 512M DDR SDRAM
Datasheet download datasheet HYB25D512800DF Datasheet
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Full PDF Text Transcription

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July 2008 www.DataSheet4U.com HYB25D512400D[E/F/T] HY[B/I]25D512800D[C/E/F/T](L) HY[B/I]25D512160D[C/E/F/T](L) 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.01 Internet Data Sheet www.DataSheet4U.com HY[B/I]25D512[40/80/16]0D[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.01, 2008-07 All Page 29 Page 33 All Adapted internet edition Changed tCK.MAX at CL=3 for -5 speed Added new IDD values New data sheet Previous Revision: Rev. 1.00, 2007-08 Previous Revision: Rev. 0.5, 2007-08 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
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