UJ4C075044B7S

SiC FET

Qorvo

UJ4C075044B7S Features

* w On-resistance RDS(on): 44mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 55nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM

UJ4C075044B7S General Description

The UJ4C075044B7S is a 750V, 44mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to.

UJ4C075044B7S Datasheet (779.10 KB)

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UJ4C075044B7S

Manufacturer:

Qorvo

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Description:

Sic fet.
750V-44mW SiC FET DATASHEET UJ4C075044B7S 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075044B7S Package D2PAK-7L Marking UJ4C075044B7S.

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UJ4C075044B7S SiC FET Qorvo

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UJ4C075044B7S Features

UJ4C075044B7S General Description

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