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3CG708

PNP Silicon High Frequency Middle Power Transistor

3CG708 Features

* 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit wit

3CG708 Datasheet (26.46 KB)

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Datasheet Details

Part number:

3CG708

Manufacturer:

Qunli Electric

File Size:

26.46 KB

Description:

Pnp silicon high frequency middle power transistor.

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3CG708 PNP Silicon High Frequency Middle Power Transistor Qunli Electric

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