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ROHM
ROHM

RF2001NS2DFH Datasheet

Super Fast Recovery Diode


RF2001NS2DFH Datasheet Preview


Super Fast Recovery Diode
RF2001NS2DFH
Datasheet
Series
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
Standard Fast Recovery
Applications
General rectification
Features
1) Cathode common dual type
2) Low switching loss
3) Low VF
ROHM : TO263S (D2PAK)
JEITA : SC-83
1 : Manufacture Date
Taping Dimensions (Unit : mm)
Construction
Silicon epitaxial planar type
TO263S
Structure
Cathode
Anode Anode
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
200 V
Reverse voltage
Average current
Non-repetitive forward surge current
Operating junction temperature
VR
Io
IFSM
Tj
Direct reverse voltage
60Hz half sin wave , resistive load
1/2Io per diode
Tc=106°C
60Hz half sin wave, one cycle
non-repetitive at Tj=25°C, per diode
-
200
20
100
150
V
A
A
°C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C, per diode)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10A - 0.86 0.93 V
Reverse current
IR
VR=200V
- 0.01 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 20 30 ns
Thermal resistance
Rth(j-c)
Junction to case
- - 2.0 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2016.06 - Rev.A
Page 1

RF2001NS2DFH
Electrical Characteristic Curves
Data Sheet
100
10
1 Tj = 150°C
0.1 Tj = 125°C
0.01
0.001
0
Tj = 75°C
Tj = 25°C
per diode
200 400 600 800 1000 1200 1400 1600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Tj = 150°C
100
Tj = 125°C
Tj = 75°C
10 Tj = 25°C
1
0.1
0
per diode
50 100 150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
1000
100
f = 1MHz
Ta = 25°C
per diode
10
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
1000
100
Tj = 25°C
per diode
10
IFSM
8.3ms 8.3ms
1cyc.
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
2/4
2016.06 - Rev.A
Page 2

RF2001NS2DFH
Electrical Characteristic Curves
Data Sheet
1000
100
Tj = 25°C
per diode
100
10
Rth(j-a)
10
IFSM
Ttimj =e 25°C
1
1 10 100
TIME : t(ms)
IFSM-t CHARACTERISTICS
30 0A Io
D.C.
0V
t
VR
25
D = 0.5
D=t/T
T VR=VRmax
Tj=150°C
20
half sin wave
15
D = 0.2
10
D = 0.1
5
0
0 30 60 90 120 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
1 Rth(j-c)
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
35
D.C.
30
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
25
D = 0.5
20
half sin wave
15
D = 0.2
10
D = 0.1
5
0
0 30 60 90 120 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/4
2016.06 - Rev.A
Page 3
Part Number RF2001NS2DFH
Manufactur ROHM
Description Super Fast Recovery Diode
Total Page 7 Pages
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