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ROHM
ROHM

RF2001NS3DFH Datasheet

Super Fast Recovery Diode


RF2001NS3DFH Datasheet Preview


Super Fast Recovery Diode
RF2001NS3DFH
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Applications
General rectification
RF2001
NS3D
Data Sheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common dual type
Construction
Silicon epitaxial planer
Structure
ROHM : LPDS
JEITA : TO263S
Manufacture Year, Week and Day
Taping dimensions (Unit : mm)
①②③
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct voltage
60Hz half sin wave resistive load ,
Tc=90°C
1/2 Io per diode
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
350
300
20
100
150
55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C, per diode)
Parameter
Symbol
Conditions
Forward voltage
Reverse current
VF IF=10A
IR VR=300V
Reverse recovery time
trr IF=0.5A,IR=1A,Irr=0.25×IR
Thermal resistance
Rth(j-c)
junction to case
Min.
Typ. Max.
1.2 1.3
0.03 10
17 25
2
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Page 1

RF2001NS3DFH
 
Data Sheet
100
10 Tj=125°C
Tj=150°C
1
Tj=25°C
Tj=75°C
0.1
0
per diode
500
1000
1500
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
2000
1000
f=1MHz
per diode
100
10
0
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
100
VR=300V
Tj=25°C
per diode
AVE:46.7nA
10
1
IR DISPERSION MAP
100000
10000
1000
Tj=150°C
Tj=125°C
100
10
1
0
Tj=75°C
Tj=25°C
per diode
50 100 150 200 250
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
300
1300
1250
1200
1150
1100
1050
1000
IF=10A
Tj=25°C
per diode
AVE:1163mV
VF DISPERSION MAP
240
f=1MHz
VR=0V
Tj=25°C
per diode
220
200 AVE:207.8pF
180
Ct DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Page 2

RF2001NS3DFH
 
Data Sheet
300
250
200
150
100
50
0
1000
1cyc
IFSM
8.3ms
AVE:167.5A
IFSM DISPERSION MAP
100
10
IFSM
8.3ms 8.3ms
1cyc
1
1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
30
AVE29.8kV
No break at 30kV
25
20
15
10
5
0 C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
30
25
20
15
10
5
0
1000
100
IF=0.5A
IR=1A
Irr=0.25×IR
Tj=25°C
per diode
AVE:16.9ns
trr DISPERSION MAP
IFSM
t
10
1
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-c)
1
0.1
0.001
0.01 0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
Page 3
Part Number RF2001NS3DFH
Manufactur ROHM
Description Super Fast Recovery Diode
Total Page 7 Pages
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