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RF2001T2D Datasheet

Fast Recovery Diode


RF2001T2D Datasheet Preview


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Fast recovery diode
RF2001T2D
Applications
General rectification
Features
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
 Structure
(1) (2) (3)
Absoslute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
200
200
20
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
100
150
Storage temoerature
Tstg -55 to +150
(*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode
Unit
V
V
A
A
C
C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
VF - 0.87 0.93
IR - 0.01 10
trr - 20 30
Unit Conditions
V IF=10A
μA VR=200V
ns IF=0.5A,IR=1A,Irr=0.25*IR
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.D
Page 1

RF2001T2D
Electrical characteristics curves
 
Data Sheet
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10
Ta=150C
10000
1 Ta=125C
0.1 Ta=75C
0.01
Ta=25C
Ta=-25C
0.001
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000
100
10
1
0.1
0
Ta=150C
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
50 100 150 200 250
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
300
1000
100
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
890
880
870
860
850
840
300
250
200
150
100
50
0
1000
100
10
1
Ta=25C
IF=10A
n=30pcs
AVE:867.0mV
VF DISPERSION MAP
100
90
80
70
60
50
40
30
20
10
0
Ta=25C
VR=300V
n=30pcs
AVE:10.1nA
IR DISPERSION MAP
400
390 Ta=25C
f=1MHz
380 VR=0V
n=10pcs
370
360
350
340 AVE:352.9pF
330
320
Ct DISPERSION MAP
Ifsm 1cyc
8.3ms
AVE:237.0A
IFSM DISPERSION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
30
Ta=25C
25 IF=0.5A
IR=1A
Irr=0.25*IR
20 n=10pcs
15
10
5
AVE:20.2ns
0
trr DISPERSION MAP
100 Mounted on epoxy board
IM=100mA
IF=10A
10 1ms tim
300us
1
Rth(j-a)
Rth(j-c)
0.1
0.001
0.01 0.1 1 10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
D=1/2
DC
Sin(=180)
5 10 15 20 25 30 35 40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.D
Page 2

RF2001T2D
  Data Sheet
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40
35
DC
30
25 D=1/2
20
0A Io
0V
t
VR
D=t/T
VR=100V
T Tj=150C
15 Sin(=180)
10
5
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
40
35 DC
30
D=1/2
25
Sin(=180)
30
No break at 30kV No break at 30kV
25
20
20 15
15
10
5
0
0
0A Io
0V
t
VR
D=t/T
VR=100V
T Tj=150C
25 50 75 100 125
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
150
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.02 - Rev.D
Page 3
Part Number RF2001T2D
Manufactur Rohm
Description Fast Recovery Diode
Total Page 4 Pages
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