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RF2001T4S Datasheet

Fast Recovery Diode


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Fast recovery diode
RF2001T4S
Applications
General rectification
 Dimensions (Unit : mm)
Features
1) High reliability.(TO-220)
2) Low noise.
3) Very fast switching .
10.0±0.3
    0.1
Structure
4.5±0.3
    0.1
2.8±0.2
    0.1
(1) (2) (3)
Construction
Silicon epitaxial planar
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
Manufacture Date
0.7±0.1
0.05
2.6±0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz/1cyc)(*1)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Business frequency, Rating of R-load, Tc=94CMAX.
Limits
430
400
20
100
150
-55 to +150
Unit
V
V
A
A
C
C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min. Typ. Max.
- - 1.6
- - 10
- - 30
Unit Conditions
V IF=20A
μA VR=400V
ns IF=0.5A,IR=1A Irr=0.25*IR
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.03 - Rev.B
Page 1

RF2001T4S
Electrical characteristics curves
 
Data Sheet
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100
Ta=75C
Ta=125C
10
Ta=150C
1
Ta=25C
Ta=-25C
1000000
100000
10000
1000
100
0.1
10
Ta=150C
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
0.01
0
200 400 600 800 1000 1200 1400 1600 1800
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1
0 50 100 150 200 250 300 350 400 450
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1600
1500
1400
1300
Ta=25C
IF=20A
n=20pcs
AVE:1399mV
VF DISPERSION MAP
500
450
400
350
300
250
200
150
100
50
0
Ta=25C
VR=400V
n=20pcs
AVE:55.8nA
IR DISPERSION MAP
1000
100
10
0
500
480
460
440
420
400
f=1MHz
5 10 15 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
25
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
AVE:442.1pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
0.1
Ifsm 1cyc
AVE:236.0A
8.3ms
IFSM DISPERSION MAP
30
25
20
15
10
5
0
AVE:22.6ns
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
trr DISPERSION MAP
1
1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Ifsm
t
100
IM=100mA
IF=1A
1ms time
10
300us
1
Rth(j-a)
Rth(j-c)
1 10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
100 0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
Sin(=180)
D=1/2
DC
10 20 30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
40
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©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.03 - Rev.B
Page 2

RF2001T4S
  Data Sheet
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50
45
40
35
30
25
20
15
10
5
0
0
D=1/2
0A
0V
DC
Io
t VR
D=t/T
VR=200V
T Tj=150C
Sin(=180)
25 50 75 100 125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
50
45
40
35
30
25
20
15
10
5
0
0
DC
D=1/2
0A Io
0V
t
VR
D=t/T
VR=200V
T Tj=150C
Sin(=180)
25 50 75 100 125
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
150
30
No break at 30kV No break at 30kV
25
20
15 AVE:8.8kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
C=150pF
R=330
ESD DISPERSION MAP
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.03 - Rev.B
Page 3
Part Number RF2001T4S
Manufactur Rohm
Description Fast Recovery Diode
Total Page 4 Pages
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