* II Maximum safe-area-of operation curves II ISIb-limit line beginning at 25 V II High-current capability a Low saturation voltage at high beta a High-dissipation capability a Low thermal resistance RCA-2N5575 and 2N5578° are high,current, high-power, hometaxial-base silicon n-p-n transistors. They
2N5578
RCA
495.32 KB
Power transistors.
File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
oornLlO
Power Transistors
Solid State Division
2N5575 2N5578
Modifi.
📁 Related Datasheet
2N5570 BIDIRECTIONAL TRIODE THYRISTORS (Motorola Inc)
2N5570 Thyristors (RCA)
2N5571 SILICON BIDIRECTIOANAL TRIODE THYRISTORS (Motorola Inc)
2N5571 Thyristors (RCA)
2N5572 SILICON BIDIRECTIOANAL TRIODE THYRISTORS (Motorola Inc)
2N5572 Thyristors (RCA)
2N5573 SILICON BIDIRECTIOANAL TRIODE THYRISTORS (Motorola Inc)
2N5573 Thyristors (RCA)
2N5574 SILICON BIDIRECTIOANAL TRIODE THYRISTORS (Motorola Inc)
2N5574 Thyristors (RCA)
