Datasheet4U Logo Datasheet4U.com

D10040200PL1 - 45-1000MHz GaAs/GaN PWR DBLR HYBRID

Datasheet Summary

Description

The D10040200PL1 is a Hybrid Power Doubler amplifier module.

The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz.

It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability.

Features

  • +VB Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT.
  • INPUT OUTPUT.
  • Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 20.0dB Min. Gain at 1GHz 380mA Max. at 24VDC 45MHz to 1000MHz CATV Amplifier Systems.

📥 Download Datasheet

Datasheet preview – D10040200PL1

Datasheet Details

Part number D10040200PL1
Manufacturer RF Micro Devices
File Size 128.85 KB
Description 45-1000MHz GaAs/GaN PWR DBLR HYBRID
Datasheet download datasheet D10040200PL1 Datasheet
Additional preview pages of the D10040200PL1 datasheet.
Other Datasheets by RF Micro Devices

Full PDF Text Transcription

Click to expand full text
D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability. Features      +VB Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT   INPUT OUTPUT    Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 20.0dB Min.
Published: |