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RFAM3790 EDGE QAM INTEGRATED AMPLIFIER

RFAM3790 Description

RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module.The part employs GaAs pHEMT die, GaAs .
optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, D.

RFAM3790 Features

* Excellent Linearity
* Extremely High Output Capability
* Voltage Controlled Attenuator
* Power Enable Featrure
* Extremely Low Distortion
* Optimal Reliability
* Low Noise
* Unconditionally Stable Under all Terminations
* 27.5 dB Typical Gain at 1218MHz
* 41

RFAM3790 Applications

* 45MHz to 1218MHz Downstream Edge QAM RF Modulators
* Headend Equipment RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd. com. DS140820 RF MICRO DEVICES® and RFMD® are trademarks of

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Datasheet Details

Part number
RFAM3790
Manufacturer
RF Micro Devices
File Size
287.73 KB
Datasheet
RFAM3790-RFMicroDevices.pdf
Description
EDGE QAM INTEGRATED AMPLIFIER

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EDGE QAM INTEGRATED AMPLIFIER RF Micro Devices
RF Micro Devices RFAM3790-like datasheet