RFAM3790 Datasheet - RF Micro Devices

RFAM3790 EDGE QAM INTEGRATED AMPLIFIER

optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, DCR 0.1Ohm, 800mA ESD Protection Zener Diode, 200mW Transient Suppressor Diode, 5% Transformer Transformer Transformer Amplifier Manufacturer Taiyo Yu.

RFAM3790 Features

* Excellent Linearity

* Extremely High Output Capability

* Voltage Controlled Attenuator

* Power Enable Featrure

* Extremely Low Distortion

* Optimal Reliability

* Low Noise

* Unconditionally Stable Under all Terminations

* 27.5 dB Typical Gain at 1218MHz

* 41

RFAM3790-RFMicroDevices.pdf

RFAM3790 Datasheet Preview — Preview of RFAM3790 PDF

Datasheet Details

Part number:

RFAM3790

Manufacturer:

RF Micro Devices

File Size:

287.73 KB

Description:

Edge qam integrated amplifier.

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RFAM3790 RFAM3790 EDGE QAM INTEGRATED AMPLIFIER RF Micro Devices

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