SGA9189Z Datasheet (RF Micro Devices) - Medium Power Discrete SiGe Transistor

SGA9189Z, Medium Power Discrete SiGe Transistor

RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz.

With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm.

This RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process.

The SGA9189Z is cost-effective for applications req

SGA9189Z Features

* 50MHz to 3000MHz Operation

* 39dBm Output IP3 Typ. at 1.96GHz

* 12.2dB Gain Typ. at 1.96GHz

* 25.5dBm P1dB Typ. at 1.96GHz

* 2.1dB NF Typ. at 0.9GHz

* Cost-Effective

* 3V to 5V Operation Applications

* Wireless Infrastructure Driver Amplifiers

* CATV Amplifiers