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SXB4089Z Datasheet - RF Micro Devices

MEDIUM POWER HBT AMPLIFIER

SXB4089Z Features

* On-Chip Active Bias Control, Single 5V Supply

* High Output 3rd Order Intercept:

* +45dBm Typ.

* High P1dB: +28dBm Typ.

* High Gain: +20dB at 880MHz

* Low RTH: 25°C/W Typ.

* Robust 2000V ESD, Class 2 Applications

* WCDMA, PCS, Cellular Systems

* Multi-Carrier Ap

SXB4089Z General Description

RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PC.

SXB4089Z Datasheet (419.66 KB)

Preview of SXB4089Z PDF

Datasheet Details

Part number:

SXB4089Z

Manufacturer:

RF Micro Devices

File Size:

419.66 KB

Description:

Medium power hbt amplifier.
SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier SXB4089Z 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SO.

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TAGS

SXB4089Z MEDIUM POWER HBT AMPLIFIER RF Micro Devices

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