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SZA3044Z - 1W POWER AMPLIFIER

Description

(HBT) amplifier housed in a low-cost surface-mountable plastic package.

Features

  • an output power detector, Optimum Technology Matching® Applied on/off power control and high RF overdrive robustness. This product is available in a RoHS Compliant and Green package GaAs HBT with matte tin finish, designated by the “Z” package suffix. GaAs MESFET.
  • InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features.
  • P1dB=31dBm at 5V.
  • 802.11a 54Mb/s 2.5% EVM Per- formance.
  • POUT=24dBm, VCC=5V, 340mA, PAE 14.5%.
  • P.

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Datasheet preview – SZA3044Z

Datasheet Details

Part number SZA3044Z
Manufacturer RF Micro Devices
File Size 375.30 KB
Description 1W POWER AMPLIFIER
Datasheet download datasheet SZA3044Z Datasheet
Additional preview pages of the SZA3044Z datasheet.

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Full PDF Text Transcription

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SZA3044Z 2.7GHz to 3.8GHz 5 V SZA3044Z1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is spe- cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance.
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