SZM-2066Z Datasheet - RF Micro Devices

SZM-2066Z 2W POWER AMPLIFIER

RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of lo.

SZM-2066Z Features

* an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET

* InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS

SZM-2066Z-RFMicroDevices.pdf