SZM-2066Z - 2W POWER AMPLIFIER
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of lo
SZM-2066Z Features
* an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET
* InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS
