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SZM-3066Z - 2W POWER AMPLIFIER

Datasheet Summary

Description

RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.

Features

  • an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
  • InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features.
  • P1dB=33.5dBm at 5V.
  • Three Stages of.

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Datasheet Details

Part number SZM-3066Z
Manufacturer RF Micro Devices
File Size 437.36 KB
Description 2W POWER AMPLIFIER
Datasheet download datasheet SZM-3066Z Datasheet
Additional preview pages of the SZM-3066Z datasheet.

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Full PDF Text Transcription

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SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Ampli- SZM-3066Zfier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands.
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